Impedance compensation based on detecting sensor data

ABSTRACT

A memory subsystem manages memory I/O impedance compensation by the memory device monitoring a need for impedance compensation. Instead of a memory controller regularly sending a signal to have the memory device update the impedance compensation when a change is not needed, the memory device can indicate when it is ready to perform an impedance compensation change. The memory controller can send an impedance compensation signal to the memory device in response to a compensation flag set by the memory or in response to determining that a sensor value has changed in excess of a threshold.

FIELD

Embodiments of the invention are generally related to inter-device I/Oimpedance compensation, and more particularly to managing impedancecompensation based on detecting sensor data.

COPYRIGHT NOTICE/PERMISSION

Portions of the disclosure of this patent document may contain materialthat is subject to copyright protection. The copyright owner has noobjection to the reproduction by anyone of the patent document or thepatent disclosure as it appears in the Patent and Trademark Officepatent file or records, but otherwise reserves all copyright rightswhatsoever. The copyright notice applies to all data as described below,and in the accompanying drawings hereto, as well as to any softwaredescribed below: Copyright© 2015, Intel Corporation, All RightsReserved.

BACKGROUND

Memory devices continue to scale to higher densities as the systems thatuse the memory increase in storage demands. Even as the amount of memoryincreases, there is an expectation that computing platforms such asservers, desktop or laptop computers, mobile devices, as well asconsumer and business electronics will increase in performance.Increasing performance while also increasing memory size has resulted inincreasing bandwidth scaling. The increased memory bandwidth scaling hasrequired I/O (input/output) impedance compensation (ZQ comp) to be ableto maintain adequate signal integrity. In previous generations ofmemory, different forms of resistance compensation or ZQ comp areprimarily managed by the memory controller using modes in the memorydevices (e.g., DRAM (dynamic random access memory)) to maintain arequired tolerance. The modes refer to operating under differentconfiguration settings.

As frequencies increase, the tolerance margins continue to increase inprecision, and the overhead required of the memory controller in termsof its I/O interface idle period also continues to increase. The greaterthe overhead required of the memory controller, the more bandwidth isdedicated to managing the I/O tolerances, which can negatively impactperformance. Traditional approaches to impedance compensation requirethe memory controller to periodically manage the I/O termination basedon worst case system assumptions. In many cases it may not be requiredto perform an impedance compensation operation if the voltage andtemperature of the memory devices are stable. More specifically, duringan active period the operating conditions of temperature and voltage ofthe memory device could be reasonably stable and not require animpedance compensation adjustment. Thus, the memory controller wouldunnecessarily issue a ZQ comp signal to the memory devices. Theunnecessary issuance of ZQ comp signals results in lower performance andincreased complexity for the memory controller to manage multiple DRAMloads according to worst case where the DRAMs could operate with longerperiods between adjustments.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description includes discussion of figures havingillustrations given by way of example of implementations of embodimentsof the invention. The drawings should be understood by way of example,and not by way of limitation. As used herein, references to one or more“embodiments” are to be understood as describing a particular feature,structure, and/or characteristic included in at least one implementationof the invention. Thus, phrases such as “in one embodiment” or “in analternate embodiment” appearing herein describe various embodiments andimplementations of the invention, and do not necessarily all refer tothe same embodiment. However, they are also not necessarily mutuallyexclusive.

FIG. 1 is a block diagram of an embodiment of a system in whichimpedance compensation is based on memory device sensor data.

FIG. 2 is a block diagram of an embodiment of a memory subsystem inwhich memory device sensor data can be used for impedance compensationin addition to refresh control settings.

FIG. 3 is an embodiment of a timing diagram of a command/address timingfor adaptable impedance compensation.

FIG. 4 is a flow diagram of an embodiment of a process for performingimpedance compensation based on memory device sensor data.

FIG. 5 is a flow diagram of an embodiment of a process for applyingmemory device sensor data for self-refresh control and impedancecompensation.

FIG. 6 is a block diagram of an embodiment of a computing system inwhich impedance compensation based on memory device sensor data can beimplemented.

FIG. 7 is a block diagram of an embodiment of a mobile device in whichimpedance compensation based on memory device sensor data can beimplemented.

Descriptions of certain details and implementations follow, including adescription of the figures, which may depict some or all of theembodiments described below, as well as discussing other potentialembodiments or implementations of the inventive concepts presentedherein.

DETAILED DESCRIPTION

As described herein, a memory subsystem utilizes sensor data from thememory device to manage memory I/O (input/output) impedancecompensation. Thus, the memory controller and the memory device canmonitor a need for impedance compensation instead of managing impedancecompensation according to worst case scenarios. Thus, the memorycontroller can send a ZQ comp (impedance compensation) signal when thememory device is ready for an update instead of having the memorycontroller regularly send ZQ comp signals when changes are not needed.The ZQ comp signal can refer to all signals issued by the memorycontroller to cause an update to the impedance compensation by thememory device. In one embodiment, the ZQ comp signal can include a ZQCalstart signal (e.g., a signal to initiate impedance calibration) and/or aZQCal latch signal (e.g., a signal to set the configuration for theimpedance compensation). In one embodiment, the memory device indicateswhen it is ready to perform an impedance compensation change. In oneembodiment, the memory controller can send a ZQ comp signal to thememory device in response to a compensation flag or other indication setby the memory device. In one embodiment, the memory controller can senda ZQ comp signal in response to a determination that a sensor valuerecorded by the memory device has changed in excess of a threshold.

The application of sensor data to the impedance compensation allows foradaptive impedance compensation management. For example, the memorydevice can record sensor data that indicates when a change greater thana threshold has occurred in an operating condition. A flag indicatingthe change can trigger the memory controller to selectively send a ZQcomp signal in response to the flag. The memory controller canselectively issue ZQ comp signals to multiple memory devices to managedown time on the command/address (C/A) bus, and thus improve bandwidthutilization of the C/A bus. In one embodiment, the memory controllerissues only a ZQCal latch command in response to sensor data. In oneembodiment, the memory controller issues both a ZQCal start command anda ZQCal latch command in response to sensor data.

In one embodiment, the memory device generates a flag in response todetecting a change in temperature or thermal performance condition oroperating condition, such as with a temperature sensor. In oneembodiment, the memory device generates a flag in response to detectinga change in an operating voltage, such as with a voltage sensor. It willbe understood that modern memory devices include multiple on-die sensorsto detect changes in performance conditions. Traditionally suchinformation is used to adjust operation of self-refresh or otheroperations. Thus, the memory device can monitor conditions that affectI/O impedance with sensors that are already present but traditionallyused for other purposes.

In one embodiment, the memory device records sensor data in a ModeRegister or other register on the memory device. In one embodiment, acontroller on the memory device itself determines when the sensor datahas changed more than a threshold, and sets a flag in a Mode Register.In one embodiment, the memory device provides the sensor dataperiodically to the memory controller, which can then determine whethera change exceeds a threshold, and indicates a need to perform impedancecompensation. In one embodiment, the memory controller periodicallymonitors or checks the Mode Register to determine if a flag has been setindicating the need for impedance compensation adjustment. In oneembodiment, a connector between the memory controller and memory devicecan be used as a flag for impedance compensation. The connector could beused for multiple condition flags, and determine what the flag indicatesif set, by reading a register.

In one embodiment, the memory controller issues an impedancecompensation signal to trigger a change in the memory device I/Osettings. For example, the impedance compensation signal can trigger thememory device to make an adjustment to driver impedance. In anotherexample, the impedance compensation signal can trigger the memory deviceto make an adjustment to on-die termination settings.

Reference to memory devices can apply to different memory types. Memorydevices generally refer to volatile memory technologies. Volatile memoryis memory whose state (and therefore the data stored on it) isindeterminate if power is interrupted to the device. Nonvolatile memoryrefers to memory whose state is determinate even if power is interruptedto the device. Dynamic volatile memory requires refreshing the datastored in the device to maintain state. One example of dynamic volatilememory includes DRAM (dynamic random access memory), or some variantsuch as synchronous DRAM (SDRAM). A memory subsystem as described hereinmay be compatible with a number of memory technologies, such as DDR3(dual data rate version 3, original release by JEDEC (Joint ElectronicDevice Engineering Council) on Jun. 27, 2007, currently on release 21),DDR4 (DDR version 4, initial specification published in September 2012by JEDEC), LPDDR3 (low power DDR version 3, JESD209-3B, August 2013 byJEDEC), LPDDR4 (LOW POWER DOUBLE DATA RATE (LPDDR) version 4, JESD209-4,originally published by JEDEC in August 2014), WIO2 (Wide I/O 2(WideIO2), JESD229-2, originally published by JEDEC in August 2014), HBM(HIGH BANDWIDTH MEMORY DRAM, JESD235, originally published by JEDEC inOctober 2013), DDR5 (DDR version 5, currently in discussion by JEDEC),LPDDR5 (currently in discussion by JEDEC), WIO3 (Wide I/O 3, currentlyin discussion by JEDEC), HBM2 (HBM version 2), currently in discussionby JEDEC), and/or others, and technologies based on derivatives orextensions of such specifications.

In addition to, or alternatively to, volatile memory, in one embodiment,reference to memory devices can refer to a nonvolatile memory devicewhose state is determinate even if power is interrupted to the device.In one embodiment, the nonvolatile memory device is a block addressablememory device, such as NAND or NOR technologies. Thus, a memory devicecan also include a future generation nonvolatile devices, such as athree dimensional crosspoint memory device, or other byte addressablenonvolatile memory devices. In one embodiment, the memory device can beor include multi-threshold level NAND flash memory, NOR flash memory,single or multi-level Phase Change Memory (PCM), a resistive memory,nanowire memory, ferroelectric transistor random access memory (FeTRAM),magnetoresistive random access memory (MRAM) memory that incorporatesmemristor technology, or spin transfer torque (STT)-M RAM, or acombination of any of the above, or other memory.

FIG. 1 is a block diagram of an embodiment of a system in whichimpedance compensation is based on memory device sensor data. System 100represents components of a memory subsystem having a memory controller110 that manages impedance compensation of memory devices 120 inaccordance with any embodiment described herein. System 100 can beincluded in any type of computing device or electronic circuit thatperforms I/O impedance compensation, and is not necessarily limited tomemory subsystems, although the memory subsystem is the example usedthroughout. System 100 receives memory access requests from a host or aprocessor, which is processing logic that executes operations based ondata stored in memory 120 or generates data to store in memory 120. Sucha processor can be or include host processor, central processing unit(CPU), microcontroller or microprocessor, graphics processor, peripheralprocessor, application specific processor, or other processor, whethersingle core or multicore processor.

Memory controller 110 represents logic to interface with memory 120 andmanage access to data stored in the memory. In one embodiment, memorycontroller 110 is integrated into the hardware of the host processor. Inone embodiment, memory controller 110 is standalone hardware, separatefrom the host processor. Memory controller 110 can be a separate circuiton a substrate that includes the processor. Memory controller 110 can bea separate die or chip integrated on a common substrate with a processordie (e.g., as a system on a chip (SoC)). In one embodiment, at leastsome of memory 120 can be included on a SoC with memory controller 110and/or a host processor.

In one embodiment, memory 120 includes volatile memory resources. In oneembodiment, memory 120 includes DRAMs. The memory resources of memory120 can be managed, for example, as different levels of memory withseparate channels, DIMMs (dual inline memory modules), ranks, DRAMs,banks, pages, rows, cachelines, and/or other architecture. Each separatememory level and resource can be individually addressable. In oneembodiment, system 100 includes multiple memory 120[0] . . . 120 [N−1],where N is an integer (typically a binary integer, or in groups of2^(N)+1).

Memory 120 includes I/O 122, which includes hardware resources tointerconnect with corresponding I/O 112 of memory controller 110. I/O112, 122 can include drivers, ODT (on die termination), pins,connectors, traces, pads, wires, and/or other hardware. I/O 122 and 112are typically organized in one or more buses of signal lines, such as acommand/address (C/A) bus for memory controller 110 to send accesscommands and address information, and a data bus to allow memorycontroller 110 and memory 120 to exchange data. The data is read fromthe different memory resources with a Read command or written to thememory resources with a Write command. I/O 112 and I/O 122 can includedata interfaces of different sizes, such as x4, x8, or x16 interfaces,where the ‘x’ represents the interface and the numeral after the ‘x’represents the data bit width of the interface (e.g., x4 has a 4-bitwide interface, and so forth).

In one embodiment, each memory 120 includes at least one sensor 124.Sensor 124 can include a thermal sensor, a current sensor, a voltagesensor, or other device to monitor an operating condition of the memory.It will be understood that different I/O impedance is useful fordifferent operating conditions. Thus, in one embodiment, memory 120reports a change in an operating condition detected by sensor 124 tomemory controller 110. In response to the change in operating condition,memory controller 110 can adjust one or more settings related to ZQ comp128, which represents hardware mechanisms that configure the I/Oimpedance (whether input or output) of memory 120. In one embodiment, ifmemory 120 determines from a reading of sensor 124 that an operatingcondition has changed by more than a threshold, memory 120 can set flag126.

It will be understood that common component numbering is shown for eachof memory 120[N−1:0], but each component operates independently withineach memory device. Thus, sensor 124 of memory 120[0] may trigger flag126 indicating a change in operating condition while the same operatingcondition has not yet triggered within memory 120[N−1]. As such, eachmemory 120 can separately indicate its operating condition to memorycontroller 110. In one embodiment, memory controller 110 separatelymanages the ZQ comp 128 of each individual memory 120. In oneembodiment, such as in an LPDDR4 implementation, each memory 120 mayinclude two separate channels on the same memory die. In such animplementation, ZQ comp 128 can be applied to both channels of a singledie, assuming that the proximity of each channel on the same die wouldexperience the same operating conditions.

Memory controller 110 includes scheduler 130, which represents logicwithin memory controller 110 to manage the timing of access operationsand commands with respect to memory 120. Scheduler 130 can generate anddetermine how to order commands to service requests for data generatedby a host processor. In one embodiment, scheduler 130 includes impedancecompensation scheduler 132. In one embodiment, scheduler 132 is part ofthe logic of scheduler 130. Scheduler 132 is illustrated specificallywith reference to the ability of memory controller 110 to manageoperations related to adjusting settings of ZQ comp 128 in the variousmemories 120.

Consider an example where each memory 120 is a DRAM having sensor 124which includes a thermal sensor, and flag 126 is a bit in a ModeRegister of the DRAM. In one embodiment, the DRAM utilizes its existingon-die thermal sensor to notify memory controller 110 when an adjustmentto a ZQ comp setting is required. In one embodiment, memory controller110 monitors the Mode Register bit represented by 126 (e.g., reading thebit periodically to determine its state). Each DRAM 120 can set flag 126based on a difference in the temperature from the last notification.Thus, once the DRAM sets flag 126, it can store the value as a baselinefor a subsequent flag to indicate a need to adjust ZQ comp 128. It willbe understood that a change in the sensor reading can be either apositive or a negative change. In one embodiment, sensor 124 internallycontrols the comparison, and sets flag 126 to trigger memory controller110 to issue a ZQ calibration latch command (e.g., ZQCal latch).

In one embodiment, rather than performing the comparison itself, memory120 can store the previous and current readings (values) of sensor 124and trigger memory controller 110 to read and compare the values. Withflag 126 or other indication from memory 120, the host or memorycontroller 110 would not need to manage timing associated withperiodically issuing a ZQCal latch command. Thus, memory 120 can triggermemory controller 110 to issue the command when it needs the commandissued, and memory controller 110 would not need to manage the timing oruse up C/A bus bandwidth sending commands that will be ignored by memory120 (ignored because no ZQ comp change or update is necessary).

In addition to the benefits with respect to a single memory device 120,it will be understood that many applications of system 100 in acomputing device will include multiple memory devices 120. With multiplememory devices 120, memory controller 110 is traditionally required tomanage the timing of issuing a ZQ comp signal to all memories 120. Sucha process traditionally takes time over a millisecond (ms) or more, eventhough the timing for each individual device is traditionally on theorder of 1 microsecond (us). By allowing memory controller 110 to issueZQ comp signals in response to sensor data on each memory device, memorycontroller 110 can save considerable bandwidth.

Additionally, in one embodiment, ZQ comp scheduler 132 can include logicto determine preferred timing to issue ZQ comp signals. For example, inone embodiment, scheduler 132 waits until a threshold number of memories120 (e.g., some number more than one) have set flag 126 prior togenerating any ZQ comp signals. Thus, when scheduler 132 disables accesstraffic commands on the C/A bus to schedule ZQ comp signal(s), it canissue signals for multiple devices and spread the overhead over multipledevices. In one embodiment, scheduler 132 includes logic to wait until athreshold number of memories 120 trigger flag 126, unless a thresholdperiod of time has passed since the first flag was detected, and thenissue the ZQ comp signals anyway. In one embodiment, memory controllersends a sequence of ZQ comp signals to multiple parallel memories 120 inresponse to one or more flags 126 being set. In one embodiment, memorycontroller 110 sends a series of commands for impedance compensation toa subset or all memories 120 in response detecting a first flag 126 byone of the memories.

By separately monitoring flags 126 from each different memory 120,memory controller 110 can avoid sending ZQ comp signals that are notneeded. Instead of having memory controller 110 incur overhead inpreemptively having both memory controller 110 and memories 120performing ZQ comp operations when not required, system 100 can respondto the need for such operations. Such operation can provide multiplepaths to improve system performance by allowing adjustments on how theimpedance compensation can be managed. For example, in one embodiment,each memory 120 can know (e.g., be configured with values to indicate)when the thresholds can be set to optimize for them to meet a toleranceimproving the speed of the system. Such configuration can result inbetter tolerances for I/O due to each memory vendor controlling thetiming of impedance compensation to their specific process and/or memoryimplementation, rather than relying on generic system-wide worst casetolerances being used.

In one embodiment, memory controller 110 reads sensor data from eachmemory 120. In one embodiment, reading the sensor data can be understoodas reading flag 126 and/or reading the values of sensor 124. Scheduler132 can determine that a performance condition has changed in excess ofa threshold by either reading flag 126 or by reading the sensor data andcomparing it against a previously stored reading. Memory controller 110can store the previous reading and/or memory 120 can store the previousreading. Memory controller 110 generates an impedance compensationsignal to trigger memory 120 to adjust at least one setting related toZQ comp 128.

FIG. 2 is a block diagram of an embodiment of a memory subsystem inwhich memory device sensor data can be used for impedance compensationin addition to refresh control settings. System 200 can be one exampleof a memory subsystem in accordance with system 100 of FIG. 1. System200 more specifically illustrates certain features that can beimplemented by one embodiment of system 100. Memory controller 210manages access to memory 220. Memory 220 can be one of multiple memorydevices in system 200. Memory controller 210 includes I/O 212 tointerface with memory 220 via I/O 230 of memory 220.

In one embodiment, memory controller 210 includes refresh control 214.Refresh control 214 represents logic within memory controller 210 tomanage the refresh of volatile memory 220. Refresh control 214 caninclude logic for managing self-refresh settings for memory 220 and/orfor normal refresh where memory controller issues the refresh commands.In one embodiment, refresh control 214 adjusts its operation based oninformation from sensors in memory 220.

In one embodiment, memory controller 210 includes ZQ compensationcontrol 216. ZQ comp control 216 represents logic to manage impedancecompensation for the I/O interface of memory 220 (I/O 230). ZQ compcontrol 216 can perform compensation control in accordance with anyembodiment described herein. ZQ comp control 216 can be or include ascheduler to manage the timing of compensation control in system 200. ZQcomp control 216 determines when to send an impedance compensationsignal to memory 220 and other memory devices based on sensor dataindicating that the sensor has detected a change in an operatingcondition. In one embodiment, memory 220 will flag the change, butmemory controller 210 will still determine when to issue a signal totrigger the memory device to adjust its I/O compensation. It will beunderstood that even though memory controller 210 makes a determinationof when to send a compensation signal, the memory controller generatesthe signal in response to detecting or determining the flag orindication by the memory.

Memory 220 includes array 242, which represents the memory resources ofmemory 220. The memory resources can include multiple rows of data,addressable by row and column. Logic 244 represents decode logic withinmemory 220 to address a location within array 242 identified by a memoryaccess command, such as a read or write. Controller 222 represents acontroller of memory 220. It will be understood that memory controller210 is a controller for system 200 and controls access to memory 220 forthe host. Controller 222 represents processing resources within memory220 to enable the memory to manage and schedule its own operations toservice the memory access commands received from memory controller 210.

In one embodiment, memory 220 includes one or more sensors 226. Sensor226 can include a voltage sensor, temperature sensor, current sensor, orother sensor that can detect a change in a performance condition thataffects the impedance of I/O 230. It will be understood that many modernmemories include sensors on-die. The sensors have traditionally beenused to detect conditions related to overage conditions. Certain changesin the conditions detected by sensor 226 can also indicate a conditionthat affects the input and output impedance of I/O 230. In oneembodiment, controller 222 determines based on readings from sensor 226that a condition has changed in excess of a threshold. It will beunderstood that the threshold will be set based on system architecture,memory type, I/O type, memory size, and other factors. The thresholddetermines when a performance condition changes sufficiently to have anundesired impact on the I/O impedance of I/O 230. A change in I/Oimpedance an affect margining and/or timing of transmit and receive.

I/O 230 includes driver 232 to drive the I/O signal lines for memory 220to send data to memory controller 210. In one embodiment, I/O 230includes ODT (on-die termination) 234 to control the input impedance formemory 220 to receive data from memory controller 210. Driver 232 andODT 234 are configurable by settings with memory 220, and can collectivebe referred to as I/O settings. The settings of driver 232 and ODT 234can affect timing, reflections, and other aspects of signal integrity onexchanges (either transmit or receive) between memory controller 210 andmemory 220. In one embodiment, register 224 represents a register thatincludes I/O settings for I/O 230. Changes in certain performanceconditions, such as operating voltage and operating temperature cancause the impedance to drift, even without changing the I/O settings.Adjustments to the I/O settings (ZQ comp) can compensate for thechanging conditions. In one embodiment, memory 220 includes two channelson a single memory die, and the I/O settings are shared across channels.

In one embodiment, the I/O settings apply to different I/O for memory220. For example, driver 232 can apply to bidirectional signal lines(such as a data bus), but will not apply to a unidirectional bus (suchas a command/address bus). ODT 234 can apply to both unidirectional andbidirectional signal lines. In one embodiment, ODT includes both pull upand pull down legs, and combinations of pull up and pull down can beconfigured, as is understood in the art. The I/O settings can determinehow hard (e.g., how much current to use) driver 232 is to drive thesignal lines, and how ODT is to be configured to terminate the signallines. A ZQCal signal or other compensation signal from memorycontroller 210 can initiate the adjustment to I/O settings within memory220.

In one embodiment, register 224 represents or includes a Mode Registerfor memory 220. A Mode Register is a register within memory 220 thatcontrols various operating settings for memory 220. The differentsettings can correspond with different modes of operation. In oneembodiment, memory controller 210 simply sets a specific bit pattern toregister elements of the Mode Register to place memory 220 in a specificmode. Depending on what mode memory 220 is in, controller 222 can applycertain settings to I/O 230 and/or other components of memory 220 and/orapply specific timing parameters to its operations.

In one embodiment, memory 220 sets a flag in register 224 (which can bea Mode Register or other register accessible by memory controller 210)in response to detecting a change in sensor 226. For example, controller222 can store (in a register or memory location used by controller 222for its operation) one or more values of readings from sensor 226.Memory 220 can detect a change in a new sensor reading as compared to aprevious or stored reading. In one embodiment, register 224 representsstorage where one or more sensor values can be stored. In oneembodiment, memory controller 210 periodically reads the value or flagset by memory 220 in register 224 to determine whether the memory isready for an adjustment to its I/O impedance settings. System 200 couldalternatively be configured with an interrupt-based mechanism. However,an interrupt mechanism may require a dedicated signal line ormultiplexed/repurposed signal line to convey the interrupt from memory220 to memory controller 210.

FIG. 3 is an embodiment of a timing diagram of a command/address timingfor adaptable impedance compensation. C/A signal 310 represents atraditional approach to impedance compensation, which is based on worstcase system conditions. With a worst case approach, C/A 310 illustratesa repeated schedule wherein the memory controller initiates impedancecompensation (referred to as ZQ comp for purposes of FIG. 3) with aZQCal start signal. The timing between initiating the ZQCal and issuinga ZQ comp latch signal (ZQCal latch) is tZQCal, which is scheduled to be1 microsecond (us) minimum. Thus, the memory controller traditionallymust initiate a ZQ calibration to trigger the memory to prepare for theZQ comp, and then issue a latch signal to cause the memory to latch theZQ comp. The time for the memory device to latch the ZQ comp is tZQLat,which is approximately 30 nanoseconds (ns).

In some cases the memory controller will hold the C/A bus idle (stop thebus) during the adjustment, and thus, C/A 310 will experience theoverhead of tZQCal+tZQLat for each calibration performed, for everymemory device. The memory controller must traditionally repeat theschedule on C/A 310 for each memory device, regardless of whether thememory needs to adjust its ZQ comp settings. Depending on the systemconfiguration, the idle time of the C/A bus, and consequently the lossin active bandwidth, could extend into milliseconds of idle time persecond. In other cases, the memory controller can hide the tZQCallatency in the background by continuing to issue other commands.However, the timing must still be monitored and scheduled for eachdevice over a regular schedule regardless of whether the memory deviceneeds to be updated or not, which can unnecessarily tie up memorycontroller resources.

C/A 320 illustrates a flag check mechanism to issuing ZQ comp inaccordance with any embodiment described herein. The issuing of ZQ compin accordance with C/A 320 can significantly reduce the overheadassociated with ZQ comp. Instead of needing to periodically issue the ZQcomp commands and schedule ZQCal latch after the 1 us period, the memorycontroller only issues ZQ comp commands as needed. C/A 320 starts offillustrating a period of time where no change to the impedance settingsare needed because there is no detected change to performanceconditions, or because the changes to performance conditions do notexceed a threshold that indicates the need to adjust compensation.Assuming some period of time after a change is not needed, in oneembodiment the memory controller checks a flag that the memory will setif the sensors indicate a change in a performance condition in excess ofa threshold. Such a determination can be made in accordance with anyembodiment described herein.

Assuming that the flag check in C/A 320 does not indicate a need toperform ZQ comp, the memory controller will continue operation withoutissuing a ZQ comp command. Assuming that the flag check in C/A 320 doesindicate a need to perform ZQ comp (the condition shown in FIG. 3), thememory controller issues a ZQCal latch signal. It will be understoodthat the time tZQChk (time between checking the flag and issuing a latchsignal) is adaptable in at least two ways. tZQChk is adaptable becauseit is expected that the memory controller will not always issue a ZQCallatch signal directly after performing a check, because at least some ofthe time the flag will not be set. tZQChk is also adaptable in that, inone embodiment, even when the flag is set, the memory controller cancontrol when to issue the ZQCal latch signal for at least a period oftime. For example, the memory controller can wait until a certain numberof memory devices set a flag before issuing ZQCal latch. It will beunderstood that after issuing ZQCal latch on C/A 320, the same period oftime, tZQLat of approximately 30 ns occurs. The memory controller willrepeat the checking and issuing of ZQCal latch only as needed in C/A320.

In one embodiment, the time to check the flag and determine to issueZQCal latch is comparable to the time tZQLat. Thus, the timing from theflag check to ZQCal latch can be on the order of tens of nanoseconds,which is significantly lower than the 1 us that the memory controllermust traditionally manage. Also, in an embodiment where multiple latchesare detected from multiple different memory devices, multiple devicescan be ready for a ZQ comp adjustment, and can all be latched insequence, which reduces significant overhead from not needing toinitiate ZQ comp in multiple memory devices that do not need to updatetheir impedance compensation. Such an approach can maximize thescheduling of ZQ comp signals on C/A 320.

In one embodiment, a memory device includes sensors that it monitors forpurposes of setting the timing configuration of refresh state (e.g.,timing of scheduling by the memory device itself for self-refresh and/orthe timing of scheduling by the memory controller for auto refresh). Inone embodiment, the memory controller periodically checks the sensordata for purposes of configuring refresh timing. Thus, in oneembodiment, the memory controller can additionally perform impedancecompensation checking based on the same sensor data checked for refresh.In such an implementation, a readout or checking of a ZQ comp flag canoccur during a refresh readout or refresh monitoring operation.Therefore, checking the ZQ comp flag can be implemented with veryminimal overhead.

FIG. 4 is a flow diagram of an embodiment of a process for performingimpedance compensation based on memory device sensor data. System 400for performing impedance compensation can be performed by a system inaccordance with any embodiment described herein, such as system 100 ofFIG. 1 and/or system 200 of FIG. 2. In one embodiment, the impedancecompensation operations include parallel operations at the memorycontroller and the memory device. In one embodiment, the memorycontroller monitors a flag to be set by the memory, and determines ifthe flag indicates the memory is read for an impedance compensationadjustment, 402. If the flag does not indicate the need to changecompensation, 404 NO branch, the memory controller continues to monitorthe flag without issuing an impedance compensation command.

While the memory controller is monitoring the flag, the memory monitorsone or more sensors to determine whether to set the flag, 412. Thesensor(s) monitor one or more performance conditions that affect I/Oimpedance of the memory. Based on values read from the sensor(s), in oneembodiment, the memory determines if a change in a performance conditionexceeds a threshold, 414. In one embodiment, the memory controller readsthe values and makes the determination. If the change in condition isnot greater than some threshold X, 416 NO branch, the memory continuesto monitor the sensor, 412. It will be understood that the change inperformance condition could be positive or negative. Thus, X couldrepresent either the positive or negative number, or the condition in416 could be whether the absolute value of the change exceeds X.

If the change in condition does exceed the threshold, 416 YES branch, inone embodiment, the memory updates a compensation flag or otherindication, 418. The flag indicates that the memory is ready to performimpedance compensation. In one embodiment, the memory stores thecondition value for use to compare against subsequent readings from thesensor, 420. When the memory sets the flag, 418, the memory controllerwill detect the flag when it next evaluates the flag. If the flag isset, 404 YES branch, in one embodiment, the memory controller determineswhether to issue an impedance compensation command, 422. In oneembodiment, the memory controller will wait until multiple memorydevices are ready for compensation prior to issuing a command. In oneembodiment, the memory controller will delay issuing a command untilafter issuing a time-sensitive memory access command.

Thus, if the memory controller determines not to update the impedancecompensation of the memory, 424 NO branch, there might be any of anumber of operations the memory controller may perform prior to issuingthe command. Eventually the memory controller will update the impedancecompensation. If the memory controller is to update the impedancecompensation, 424 YES branch, the memory controller can reset the flag,426. In one embodiment, the memory controller can directly write thevalue of the flag. In one embodiment, the memory controller issues asignal that causes the memory to reset the flag.

The memory controller generates one or more impedance compensationsignals or commands to issue to one or more memories, 428. The memorycontroller sends the signals or issues the commands to the memory, 430.The memory receives the ZQ comp signal and decodes the signal, 432. Inone embodiment, the memory determines what update to make, 434. In oneembodiment, the ZQ comp signal indicates what change to make. In oneembodiment, the memory determines what change to make in associationwith detecting the condition indicated by the sensor and setting theflag. In one embodiment, the memory can update different aspects of theI/O impedance.

In one embodiment, the memory updates a setting related to ODT, 436 ODTbranch. The memory can set a new setting for one or more aspects of ODT,such as read impedance and/or write impedance, 438. In one embodiment,the memory updates a setting related to the output driver, 436 DRIVERbranch. The memory can set a new setting for the output driver, 440.

FIG. 5 is a flow diagram of an embodiment of a process for applyingmemory device sensor data for self-refresh control and impedancecompensation. Process 500 illustrates an embodiment of how a memory canapply sensor data. Whereas process 400 of FIG. 4 illustrates a processin which the memory device itself makes a determination to set a flagbased on a reading of its sensor(s), process 500 illustrates a processin which the memory controller can compute the determination. The memoryincludes one or more sensors, which is monitors for a change, 502. Inone embodiment, the memory periodically acquires and records the sensorreading. In one embodiment, the memory records the sensor data in aregister accessible to the memory controller, 504.

In one embodiment, the memory controller determines if it is time toread the register for the sensor data, 506. If it is time for the memorycontroller to read the register, 508 YES branch, the memory provides theregister data, 510. In one embodiment, the memory controller uses theregister data with the sensor readings to determine what settings toapply to the memory for purposes of refresh and/or self-refresh. Thus,the memory controller can set one or more refresh settings based on thesensor data, 512. In one embodiment, the memory controller applies thesensor data also to determine whether to issue a ZQ compensation commandto the memory. In one embodiment, such an operation may require thememory controller to manage the traditional 1 us timing of tZQCal, butwill only need to manage such timing when a change in compensation isrequired. Thus, the memory controller can still preserve bandwidth onthe C/A bus by such an approach to ZQ comp. Thus, the memory controllercan determine if the sensor data indicates a need for impedancecompensation in the memory, 514. In one embodiment, the determinationand issuance of the impedance compensation can be performed inaccordance with process 400 starting at 424. The difference would bethat the memory controller may need to issue both a ZQCal initiate (orstart) command as well as a latch as the ZQ comp signal or command.

FIG. 6 is a block diagram of an embodiment of a computing system inwhich impedance compensation based on memory device sensor data can beimplemented. System 600 represents a computing device in accordance withany embodiment described herein, and can be a laptop computer, a desktopcomputer, a server, a gaming or entertainment control system, a scanner,copier, printer, routing or switching device, or other electronicdevice. System 600 includes processor 620, which provides processing,operation management, and execution of instructions for system 600.Processor 620 can include any type of microprocessor, central processingunit (CPU), processing core, or other processing hardware to provideprocessing for system 600. Processor 620 controls the overall operationof system 600, and can be or include, one or more programmablegeneral-purpose or special-purpose microprocessors, digital signalprocessors (DSPs), programmable controllers, application specificintegrated circuits (ASICs), programmable logic devices (PLDs), or thelike, or a combination of such devices.

Memory subsystem 630 represents the main memory of system 600, andprovides temporary storage for code to be executed by processor 620, ordata values to be used in executing a routine. Memory subsystem 630 caninclude one or more memory devices such as read-only memory (ROM), flashmemory, one or more varieties of random access memory (RAM), or othermemory devices, or a combination of such devices. Memory subsystem 630stores and hosts, among other things, operating system (OS) 636 toprovide a software platform for execution of instructions in system 600.Additionally, other instructions 638 are stored and executed from memorysubsystem 630 to provide the logic and the processing of system 600. OS636 and instructions 638 are executed by processor 620. Memory subsystem630 includes memory device 632 where it stores data, instructions,programs, or other items. In one embodiment, memory subsystem includesmemory controller 634, which is a memory controller to generate andissue commands to memory device 632. It will be understood that memorycontroller 634 could be a physical part of processor 620.

Processor 620 and memory subsystem 630 are coupled to bus/bus system610. Bus 610 is an abstraction that represents any one or more separatephysical buses, communication lines/interfaces, and/or point-to-pointconnections, connected by appropriate bridges, adapters, and/orcontrollers. Therefore, bus 610 can include, for example, one or more ofa system bus, a Peripheral Component Interconnect (PCI) bus, aHyperTransport or industry standard architecture (ISA) bus, a smallcomputer system interface (SCSI) bus, a universal serial bus (USB), oran Institute of Electrical and Electronics Engineers (IEEE) standard1394 bus (commonly referred to as “Firewire”). The buses of bus 610 canalso correspond to interfaces in network interface 650.

System 600 also includes one or more input/output (I/O) interface (s)640, network interface 650, one or more internal mass storage device (s)660, and peripheral interface 670 coupled to bus 610. I/O interface 640can include one or more interface components through which a userinteracts with system 600 (e.g., video, audio, and/or alphanumericinterfacing). Network interface 650 provides system 600 the ability tocommunicate with remote devices (e.g., servers, other computing devices)over one or more networks. Network interface 650 can include an Ethernetadapter, wireless interconnection components, USB (universal serialbus), or other wired or wireless standards-based or proprietaryinterfaces.

Storage 660 can be or include any conventional medium for storing largeamounts of data in a nonvolatile manner, such as one or more magnetic,solid state, or optical based disks, or a combination. Storage 660 holdscode or instructions and data 662 in a persistent state (i.e., the valueis retained despite interruption of power to system 600). Storage 660can be generically considered to be a “memory,” although memory 630 isthe executing or operating memory to provide instructions to processor620. Whereas storage 660 is nonvolatile, memory 630 can include volatilememory (i.e., the value or state of the data is indeterminate if poweris interrupted to system 600).

Peripheral interface 670 can include any hardware interface notspecifically mentioned above. Peripherals refer generally to devicesthat connect dependently to system 600. A dependent connection is onewhere system 600 provides the software and/or hardware platform on whichoperation executes, and with which a user interacts. In one embodiment,system 600 is a server device. In one embodiment in a server device,system 600 can be one of multiple systems combined together in a serverconfiguration. For example, the server can be implemented as a bladeserver combined with other blade servers in a chassis system.

In one embodiment, memory subsystem 630 includes ZQ comp control 680,which represents logic within system 600 to implement I/O impedancecontrol for memory 632 based on sensor data. ZQ comp control 680 isshown as a separate element in system 600, but represents logic inmemory controller 634 and memory 632 to implement ZQ comp in accordancewith any embodiment described herein. In one embodiment, memory 632determines when it needs ZQ comp and sets a flag to trigger memorycontroller 634 to issue a ZQ comp command.

FIG. 7 is a block diagram of an embodiment of a mobile device in whichimpedance compensation based on memory device sensor data can beimplemented. Device 700 represents a mobile computing device, such as acomputing tablet, a mobile phone or smartphone, a wireless-enablede-reader, wearable computing device, or other mobile device. It will beunderstood that certain of the components are shown generally, and notall components of such a device are shown in device 700.

Device 700 includes processor 710, which performs the primary processingoperations of device 700. Processor 710 can include one or more physicaldevices, such as microprocessors, application processors,microcontrollers, programmable logic devices, or other processing means.The processing operations performed by processor 710 include theexecution of an operating platform or operating system on whichapplications and/or device functions are executed. The processingoperations include operations related to I/O (input/output) with a humanuser or with other devices, operations related to power management,and/or operations related to connecting device 700 to another device.The processing operations can also include operations related to audioI/O and/or display I/O.

In one embodiment, device 700 includes audio subsystem 720, whichrepresents hardware (e.g., audio hardware and audio circuits) andsoftware (e.g., drivers, codecs) components associated with providingaudio functions to the computing device. Audio functions can includespeaker and/or headphone output, as well as microphone input. Devicesfor such functions can be integrated into device 700, or connected todevice 700. In one embodiment, a user interacts with device 700 byproviding audio commands that are received and processed by processor710.

Display subsystem 730 represents hardware (e.g., display devices) andsoftware (e.g., drivers) components that provide a visual and/or tactiledisplay for a user to interact with the computing device. Displaysubsystem 730 includes display interface 732, which includes theparticular screen or hardware device used to provide a display to auser. In one embodiment, display interface 732 includes logic separatefrom processor 710 to perform at least some processing related to thedisplay. In one embodiment, display subsystem 730 includes a touchscreendevice that provides both output and input to a user. In one embodiment,display subsystem 730 includes a high definition (HD) display thatprovides an output to a user. High definition can refer to a displayhaving a pixel density of approximately 100 PPI (pixels per inch) orgreater, and can include formats such as full HD (e.g., 1080p), retinadisplays, 4K (ultra high definition or UHD), or others.

I/O controller 740 represents hardware devices and software componentsrelated to interaction with a user. I/O controller 740 can operate tomanage hardware that is part of audio subsystem 720 and/or displaysubsystem 730. Additionally, I/O controller 740 illustrates a connectionpoint for additional devices that connect to device 700 through which auser might interact with the system. For example, devices that can beattached to device 700 might include microphone devices, speaker orstereo systems, video systems or other display device, keyboard orkeypad devices, or other I/O devices for use with specific applicationssuch as card readers or other devices.

As mentioned above, I/O controller 740 can interact with audio subsystem720 and/or display subsystem 730. For example, input through amicrophone or other audio device can provide input or commands for oneor more applications or functions of device 700. Additionally, audiooutput can be provided instead of or in addition to display output. Inanother example, if display subsystem includes a touchscreen, thedisplay device also acts as an input device, which can be at leastpartially managed by I/O controller 740. There can also be additionalbuttons or switches on device 700 to provide I/O functions managed byI/O controller 740.

In one embodiment, I/O controller 740 manages devices such asaccelerometers, cameras, light sensors or other environmental sensors,gyroscopes, global positioning system (GPS), or other hardware that canbe included in device 700. The input can be part of direct userinteraction, as well as providing environmental input to the system toinfluence its operations (such as filtering for noise, adjustingdisplays for brightness detection, applying a flash for a camera, orother features). In one embodiment, device 700 includes power management750 that manages battery power usage, charging of the battery, andfeatures related to power saving operation.

Memory subsystem 760 includes memory device (s) 762 for storinginformation in device 700. Memory subsystem 760 can include nonvolatile(state does not change if power to the memory device is interrupted)and/or volatile (state is indeterminate if power to the memory device isinterrupted) memory devices. Memory 760 can store application data, userdata, music, photos, documents, or other data, as well as system data(whether long-term or temporary) related to the execution of theapplications and functions of system 700. In one embodiment, memorysubsystem 760 includes memory controller 764 (which could also beconsidered part of the control of system 700, and could potentially beconsidered part of processor 710). Memory controller 764 includes ascheduler to generate and issue commands to memory device 762.

Connectivity 770 includes hardware devices (e.g., wireless and/or wiredconnectors and communication hardware) and software components (e.g.,drivers, protocol stacks) to enable device 700 to communicate withexternal devices. The external device could be separate devices, such asother computing devices, wireless access points or base stations, aswell as peripherals such as headsets, printers, or other devices.

Connectivity 770 can include multiple different types of connectivity.To generalize, device 700 is illustrated with cellular connectivity 772and wireless connectivity 774. Cellular connectivity 772 refersgenerally to cellular network connectivity provided by wirelesscarriers, such as provided via GSM (global system for mobilecommunications) or variations or derivatives, CDMA (code divisionmultiple access) or variations or derivatives, TDM (time divisionmultiplexing) or variations or derivatives, LTE (long termevolution—also referred to as “4G”), or other cellular servicestandards. Wireless connectivity 774 refers to wireless connectivitythat is not cellular, and can include personal area networks (such asBluetooth), local area networks (such as WiFi), and/or wide areanetworks (such as WiMax), or other wireless communication. Wirelesscommunication refers to transfer of data through the use of modulatedelectromagnetic radiation through a non-solid medium. Wiredcommunication occurs through a solid communication medium.

Peripheral connections 780 include hardware interfaces and connectors,as well as software components (e.g., drivers, protocol stacks) to makeperipheral connections. It will be understood that device 700 could bothbe a peripheral device (“to” 782) to other computing devices, as well ashave peripheral devices (“from” 784) connected to it. Device 700commonly has a “docking” connector to connect to other computing devicesfor purposes such as managing (e.g., downloading and/or uploading,changing, synchronizing) content on device 700. Additionally, a dockingconnector can allow device 700 to connect to certain peripherals thatallow device 700 to control content output, for example, to audiovisualor other systems.

In addition to a proprietary docking connector or other proprietaryconnection hardware, device 700 can make peripheral connections 780 viacommon or standards-based connectors. Common types can include aUniversal Serial Bus (USB) connector (which can include any of a numberof different hardware interfaces), DisplayPort including MiniDisplayPort(MDP), High Definition Multimedia Interface (HDMI), Firewire, or othertype.

In one embodiment, memory subsystem 760 includes ECC 766. ECC 766 isshown as a separate element, but represents internal ECC in memorydevices 762 and system level ECC in memory controller 764. The internalECC generates internal check bits after performing error detection andcorrection in response to a read request. The external ECC of memorycontroller 764 can use the check bits as metadata to augment errorcorrection at the system level.

In one embodiment, memory subsystem 760 includes ZQ comp control 766,which represents logic within system 700 to implement I/O impedancecontrol for memory 762 based on sensor data. ZQ comp control 766 isshown as a separate element in system 700, but represents logic inmemory controller 764 and memory 762 to implement ZQ comp in accordancewith any embodiment described herein. In one embodiment, memory 762determines when it needs ZQ comp and sets a flag to trigger memorycontroller 764 to issue a ZQ comp command.

In one aspect, a method for impedance compensation of an I/O(input/output) interface includes: detecting, via logic on a memorydevice, a change in a performance condition affecting I/O impedance forthe memory device; triggering a compensation flag signal to anassociated memory controller in response to detecting the change; andreceiving at the memory device from the memory controller, in responseto the compensation flag signal, an impedance compensation signaltriggering a change in I/O impedance compensation in the memory device.

In one embodiment, detecting the change in performance conditioncomprises detecting a change in operating temperature that exceeds athreshold. In one embodiment, detecting the change in performancecondition comprises detecting a change in operating voltage that exceedsa threshold. In one embodiment, detecting the change in performancecondition comprises detecting the change with on-die sensors. In oneembodiment, triggering the compensation flag signal comprises setting avalue in a Mode Register of the memory device to be checked periodicallyby the memory controller. In one embodiment, the impedance compensationsignal triggering the change in I/O impedance compensation comprisestriggering an adjustment to a driver impedance. In one embodiment, theimpedance compensation signal triggering the change in I/O impedancecompensation comprises triggering an adjustment to an on-die terminationvalue. In one embodiment, the memory device is one of multiple memorydevices coupled in parallel to the memory controller, and whereinreceiving the impedance compensation signal in response to thecompensation flag signal comprises receiving the impedance compensationsignal from the memory controller only after the memory controller hasreceived a compensation flag from a threshold number of the multiplememory devices. In one embodiment, the memory device is one of multiplememory devices coupled in parallel to the memory controller, and whereinreceiving the impedance compensation signal triggering the change in I/Oimpedance compensation further comprises receiving one of a continuoussequence of impedance compensation signals sent in sequence by thememory controller. In one embodiment, the impedance compensation signalcomprises a ZQCal latch signal that triggers the memory device to set animpedance compensation configuration. In one embodiment, the impedancecompensation signal comprises a ZQCal start signal that triggers thememory device to initiate an impedance compensation calibration routine,and a ZQCal latch signal that triggers the memory device to set animpedance compensation configuration.

In one aspect, a memory controller that manages impedance compensationof a memory includes: I/O (input/output) hardware coupled to a memorydevice to read data from the memory device indicating a change in asensor reading; and a scheduler to determine that a performancecondition affecting I/O impedance for the memory device has changed inexcess of a threshold based on reading the data from the memory device,and in response to determining that the performance condition haschanged in excess of the threshold, to generate an impedancecompensation signal to the memory device to trigger a change in I/Oimpedance compensation in the memory device.

In one embodiment, the I/O hardware is to a flag set by the memorydevice indicating that the performance condition has changed in excessof the threshold. In one embodiment, the I/O hardware is to read datafrom the sensor in response to a flag set by the memory device. In oneembodiment, the I/O hardware is to read data from the sensor in responseto a flag set by the memory device indicating that the performancecondition has changed in excess of the threshold. In one embodiment, thescheduler is to determine that a change in operating temperature exceedsa threshold within the memory. In one embodiment, the scheduler is todetermine that a change in operating voltage that exceeds a thresholdwithin the memory. In one embodiment, the sensor comprises an on-diesensor of the memory device that monitors performance conditions to seta parameter for refresh for the memory device. In one embodiment, theI/O hardware is to read one or more values from a Mode Register of thememory device. In one embodiment, the I/O hardware is to periodicallycheck the one or more values of the Mode Register. In one embodiment,the scheduler is to generate an impedance compensation signal triggeringan adjustment to a driver impedance of the memory device I/O. In oneembodiment, the scheduler is to generate an impedance compensationsignal triggering an adjustment to an on-die termination value of thememory device I/O. In one embodiment, the I/O couples to multipleparallel memory devices, and wherein the scheduler is to delaygenerating the impedance compensation signal for a memory device untilat least a threshold number of memory devices are determined to have aperformance conditions affecting I/O impedance that have changed inexcess of a threshold. In one embodiment, the I/O couples to multipleparallel memory devices, and wherein the scheduler is to schedule acontinuous sequence of impedance compensation signals sent in sequenceto at least a plurality of the multiple parallel memory devices. In oneembodiment, the I/O couples to multiple parallel memory devices, andwherein the scheduler is to schedule a period of time to cease sendingaccess commands on a command/address (C/A) bus for all memory devices,and to send a sequence of impedance compensation signals to at least twoof the memory devices while no access command traffic is sent over theC/A bus. In one embodiment, the scheduler is to generate a ZQCal latchsignal that triggers the memory device to set an impedance compensationconfiguration. In one embodiment, the scheduler is to generate a ZQCalstart signal that triggers the memory device to initiate an impedancecompensation calibration routine, and a ZQCal latch signal that triggersthe memory device to set an impedance compensation configuration.

In one aspect, an electronic device with a memory subsystem includes: anLPDDR (low power dual data rate) DRAM (dynamic random access memory)including an on-die sensor to detect changes to a performance conditionthat affects I/O impedance for the DRAM, and a register to record dataabout the performance condition; and a memory controller to controlaccess to the LPDDR DRAM, the memory controller including I/O(input/output) hardware coupled to the DRAM to read data from the DRAMindicating a change in a sensor reading; and a scheduler to determinethat a performance condition affecting I/O impedance for the DRAM haschanged in excess of a threshold based on reading the data from thememory device, and in response to determining that the performancecondition has changed in excess of the threshold, to generate animpedance compensation signal to the DRAM to trigger a change in I/Oimpedance compensation in the DRAM; and a touchscreen display coupled togenerate a display based on data accessed from the DRAM. The electronicdevice can include a memory controller coupled to a DRAM in accordancewith any embodiment described above with respect to a memory controllercoupled to a memory device.

In one aspect, an apparatus for impedance compensation of an I/O(input/output) interface includes: means for detecting, via logic on amemory device, a change in a performance condition affecting I/Oimpedance for the memory device; means for triggering a compensationflag signal to an associated memory controller in response to detectingthe change; and means for receiving at the memory device from the memorycontroller, in response to the compensation flag signal, an impedancecompensation signal triggering a change in I/O impedance compensation inthe memory device. The apparatus can include means for performing anyembodiment of the method described above.

In one aspect, an article of manufacture comprising a computer readablestorage medium having content stored thereon, which when accessed causesa machine to perform operations including: detecting, via logic on amemory device, a change in a performance condition affecting I/Oimpedance for the memory device; triggering a compensation flag signalto an associated memory controller in response to detecting the change;and receiving at the memory device from the memory controller, inresponse to the compensation flag signal, an impedance compensationsignal triggering a change in I/O impedance compensation in the memorydevice. The article of manufacture can include content for performingoperation in accordance with any embodiment of the method describedabove.

Flow diagrams as illustrated herein provide examples of sequences ofvarious process actions. The flow diagrams can indicate operations to beexecuted by a software or firmware routine, as well as physicaloperations. In one embodiment, a flow diagram can illustrate the stateof a finite state machine (FSM), which can be implemented in hardwareand/or software. Although shown in a particular sequence or order,unless otherwise specified, the order of the actions can be modified.Thus, the illustrated embodiments should be understood only as anexample, and the process can be performed in a different order, and someactions can be performed in parallel. Additionally, one or more actionscan be omitted in various embodiments; thus, not all actions arerequired in every embodiment. Other process flows are possible.

To the extent various operations or functions are described herein, theycan be described or defined as software code, instructions,configuration, and/or data. The content can be directly executable(“object” or “executable” form), source code, or difference code(“delta” or “patch” code). The software content of the embodimentsdescribed herein can be provided via an article of manufacture with thecontent stored thereon, or via a method of operating a communicationinterface to send data via the communication interface. A machinereadable storage medium can cause a machine to perform the functions oroperations described, and includes any mechanism that stores informationin a form accessible by a machine (e.g., computing device, electronicsystem, etc.), such as recordable/non-recordable media (e.g., read onlymemory (ROM), random access memory (RAM), magnetic disk storage media,optical storage media, flash memory devices, etc.). A communicationinterface includes any mechanism that interfaces to any of a hardwired,wireless, optical, etc., medium to communicate to another device, suchas a memory bus interface, a processor bus interface, an Internetconnection, a disk controller, etc. The communication interface can beconfigured by providing configuration parameters and/or sending signalsto prepare the communication interface to provide a data signaldescribing the software content. The communication interface can beaccessed via one or more commands or signals sent to the communicationinterface.

Various components described herein can be a means for performing theoperations or functions described. Each component described hereinincludes software, hardware, or a combination of these. The componentscan be implemented as software modules, hardware modules,special-purpose hardware (e.g., application specific hardware,application specific integrated circuits (ASICs), digital signalprocessors (DSPs), etc.), embedded controllers, hardwired circuitry,etc.

Besides what is described herein, various modifications can be made tothe disclosed embodiments and implementations of the invention withoutdeparting from their scope. Therefore, the illustrations and examplesherein should be construed in an illustrative, and not a restrictivesense. The scope of the invention should be measured solely by referenceto the claims that follow.

What is claimed is:
 1. A method for impedance compensation of an I/O(input/output) interface, comprising: detecting, via logic on a memorydevice, a change in a performance condition affecting I/O impedance forthe memory device; triggering a compensation flag signal to anassociated memory controller in response to detecting the change; andreceiving at the memory device from the memory controller, in responseto the compensation flag signal, an impedance compensation signaltriggering a change in I/O impedance compensation in the memory device.2. The method of claim 1, wherein detecting the change in performancecondition comprises detecting a change in operating temperature thatexceeds a threshold.
 3. The method of claim 1, wherein detecting thechange in performance condition comprises detecting a change inoperating voltage that exceeds a threshold.
 4. The method of claim 1,wherein detecting the change in performance condition comprisesdetecting the change with on-die sensors.
 5. The method of claim 1,wherein triggering the compensation flag signal comprises setting avalue in a Mode Register of the memory device to be checked periodicallyby the memory controller.
 6. The method of claim 1, wherein theimpedance compensation signal triggering the change in I/O impedancecompensation comprises triggering an adjustment to a driver impedance.7. The method of claim 1, wherein the impedance compensation signaltriggering the change in I/O impedance compensation comprises triggeringan adjustment to an on-die termination value.
 8. The method of claim 1,wherein the memory device is one of multiple memory devices coupled inparallel to the memory controller, and wherein receiving the impedancecompensation signal in response to the compensation flag signalcomprises receiving the impedance compensation signal from the memorycontroller only after the memory controller has received a compensationflag from a threshold number of the multiple memory devices.
 9. Themethod of claim 1, wherein the memory device is one of multiple memorydevices coupled in parallel to the memory controller, and whereinreceiving the impedance compensation signal triggering the change in I/Oimpedance compensation further comprises receiving one of a continuoussequence of impedance compensation signals sent in sequence by thememory controller.
 10. The method of claim 1, wherein the impedancecompensation signal comprises a ZQCal latch signal that triggers thememory device to set an impedance compensation configuration.
 11. Themethod of claim 1, wherein the impedance compensation signal comprises aZQCal start signal that triggers the memory device to initiate animpedance compensation calibration routine, and a ZQCal latch signalthat triggers the memory device to set an impedance compensationconfiguration.
 12. A memory controller that manages impedancecompensation of a memory, comprising: I/O (input/output) hardwarecoupled to a memory device to read data from the memory deviceindicating a change in a sensor reading; and a scheduler to determinethat a performance condition affecting I/O impedance for the memorydevice has changed in excess of a threshold based on reading the datafrom the memory device, and in response to determining that theperformance condition has changed in excess of the threshold, togenerate an impedance compensation signal to the memory device totrigger a change in I/O impedance compensation in the memory device. 13.The memory controller of claim 12, wherein the I/O hardware is to readthe sensor data in response to a flag set by the memory deviceindicating that the performance condition has changed in excess of thethreshold.
 14. The memory controller of claim 12, wherein the scheduleris to determine that a change in operating temperature exceeds athreshold within the memory, or to determine that a change in operatingvoltage that exceeds a threshold within the memory.
 15. The memorycontroller of claim 12, wherein the I/O hardware is to read one or morevalues from a Mode Register of the memory device.
 16. The memorycontroller of claim 12, wherein the scheduler is to generate animpedance compensation signal triggering an adjustment to a driverimpedance of the memory device I/O, or triggering an adjustment to anon-die termination value of the memory device I/O.
 17. The memorycontroller of claim 12, wherein the I/O couples to multiple parallelmemory devices, and wherein the scheduler is to delay generating theimpedance compensation signal for a memory device until at least aspecific number of memory devices are determined to have a performanceconditions affecting I/O impedance that have changed in excess of athreshold.
 18. The memory controller of claim 12, wherein the I/Ocouples to multiple parallel memory devices, and wherein the scheduleris to schedule a period of time to cease sending access commands on acommand/address (C/A) bus for all memory devices, and to send a sequenceof impedance compensation signals to at least two of the memory deviceswhile no access command traffic is sent over the C/A bus.
 19. Anelectronic device with a memory subsystem, comprising: an LPDDR (lowpower dual data rate) DRAM (dynamic random access memory) including anon-die sensor to detect changes to a performance condition that affectsI/O impedance for the DRAM, and a register to record data about theperformance condition; and a memory controller to control access to theLPDDR DRAM, the memory controller including I/O (input/output) hardwarecoupled to the DRAM to read data from the DRAM indicating a change in asensor reading; and a scheduler to determine that a performancecondition affecting I/O impedance for the DRAM has changed in excess ofa threshold based on reading the data from the memory device, and inresponse to determining that the performance condition has changed inexcess of the threshold, to generate an impedance compensation signal tothe DRAM to trigger a change in I/O impedance compensation in the DRAM;and a touchscreen display coupled to generate a display based on dataaccessed from the DRAM.
 20. The electronic device of claim 19, whereinthe scheduler is to determine that a change in operating temperatureexceeds a threshold within the DRAM, or to determine that a change inoperating voltage that exceeds a threshold within the DRAM.
 21. Theelectronic device of claim 19, wherein the scheduler is to generate animpedance compensation signal triggering an adjustment to a driverimpedance of the DRAM I/O, or triggering an adjustment to an on-dietermination value of the DRAM I/O.
 22. The electronic device of claim19, wherein the DRAM is one of multiple parallel LPDDR DRAMs, andwherein the scheduler is to delay generating the impedance compensationsignal for a DRAM until at least a specific number of DRAMs aredetermined to have a performance conditions affecting I/O impedance thathave changed in excess of a threshold.